SSM6N7002BFU(T5L,F
MOSFET 2N-CH 60V 0.2A US6Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage SSM6N7002BFU-T5L-F is a dual N-channel MOSFET array designed for surface mount applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 200mA at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 2.1 Ohms at 500mA, 10V, and a maximum power dissipation of 300mW. It utilizes Metal Oxide technology and includes a logic level gate feature. The input capacitance (Ciss) is 17pF at 25V. The device operates at junction temperatures up to 150°C and is supplied in a 6-TSSOP, SC-88, SOT-363 package, specifically the US6 supplier device package, on a cut tape. This component is suitable for power management and signal switching in consumer electronics and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3.1V @ 250µA |
| Supplier Device Package | US6 |
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