SSM6N7002BFU,LF
MOSFET 2N-CH 60V 0.2A US6Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage presents the SSM6N7002BFU-LF, a dual 2 N-channel MOSFET array in a compact US6 package. This device features a 60V drain-source voltage rating and a continuous drain current capability of 200mA at 25°C. Optimized for logic-level gate drive, it offers a maximum Rds(On) of 2.1 Ohm at 500mA and 10V, with a power dissipation of 300mW. The input capacitance (Ciss) is 17pF at 25V. Operating at temperatures up to 150°C (TJ), this surface mount component is supplied on tape and reel. The SSM6N7002BFU-LF is well-suited for applications in portable electronics and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3.1V @ 250µA |
| Supplier Device Package | US6 |
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