SSM6N48FU,LF
MOSFET 2N-CH 30V 0.1A US6Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSIII series SSM6N48FU-LF is a 2 N-channel MOSFET array featuring a 30V drain-to-source voltage and a continuous drain current of 100mA (Ta) at 25°C. This device offers a low on-resistance of 3.2 Ohms maximum at 10mA and 4V. The SSM6N48FU-LF is housed in a compact US6 (6-TSSOP, SC-88, SOT-363) package, suitable for surface mounting. With a power dissipation of 300mW, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include an input capacitance of 15.1pF maximum at 3V and a gate threshold voltage of 1.5V maximum at 100µA. This component is utilized in various electronic applications, including consumer electronics and industrial automation. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: U-MOSIIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 15.1pF @ 3V |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 10mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | US6 |
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