SSM6N42FE(TE85L,F)
MOSFET 2N-CH 20V 0.8A ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Toshiba Semiconductor and Storage's SSM6N42FE-TE85L-F- is a 2 N-channel MOSFET array in an ES6 surface mount package. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 800mA at 25°C. The array offers a low on-resistance of 240mOhm maximum at 500mA and 4.5V Vgs, with a power dissipation of 150mW. Key parameters include a gate charge (Qg) of 2nC maximum at 4.5V and an input capacitance (Ciss) of 90pF maximum at 10V. The logic level gate feature enhances compatibility with lower voltage control signals. Operating temperature range extends to 150°C. This component is commonly utilized in consumer electronics and mobile devices. The device is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 150mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 10V |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | ES6 |
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