SSM6N37CTD(TPL3)
MOSFET 2N-CH 20V 0.25A CST6DManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage presents the SSM6N37CTD-TPL3-, a dual 2-channel N-channel MOSFET array in a compact CST6D package. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 250mA at 25°C. The low Rds(On) of 2.2 Ohm at 100mA and 4.5V, combined with a logic level gate, makes it suitable for low-power switching applications. With a maximum power dissipation of 140mW and an operating temperature up to 150°C, this component is engineered for reliability in demanding environments. Its surface mount configuration and tape and reel packaging facilitate high-volume manufacturing. This MOSFET array is commonly utilized in consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 140mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 250mA |
| Input Capacitance (Ciss) (Max) @ Vds | 12pF @ 10V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | CST6D |
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