SSM6L13TU(T5L,F,T)
MOSFET N/P-CH 20V 800MA UF6Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage SSM6L13TU-T5L-F-T- is a MOSFET array featuring N and P-channel configurations. This component offers a Drain to Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 800mA at 25°C (Ta). Designed for surface mounting, it is supplied in a UF6 package on tape and reel. Key features include a logic level gate, operable with 1.8V drive. Input capacitance (Ciss) is rated at 268pF @ 10V for the N-channel and 250pF @ 10V for the P-channel. Maximum power dissipation is 500mW, with an operating temperature range up to 150°C (TJ). On-resistance (Rds On) is 143mOhm @ 600mA, 4V for the N-channel and 234mOhm @ 600mA, 4V for the P-channel. This device is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 268pF @ 10V, 250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UF6 |
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