SSM6L11TU(TE85L,F)
MOSFET N/P-CH 20V 0.5A UF6Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage's SSM6L11TU-TE85L-F- is a MOSFET array featuring both N-channel and P-channel configurations within a 6-SMD, Flat Leads UF6 package. This device offers a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 500mA at 25°C. The MOSFETs are designed with a logic level gate and exhibit a maximum Rds On of 145mOhm at 250mA and 4V Vgs. With a maximum power dissipation of 500mW and an operating junction temperature up to 150°C, this component is suitable for applications in consumer electronics and industrial control systems. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 268pF @ 10V |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 250MA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Supplier Device Package | UF6 |
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