TRS20N65D,S1F
DIODE ARR SCHOTT 650V 10A TO247Manufacturer: Toshiba Semiconductor and Storage
Categories: Diode Arrays
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Toshiba Semiconductor and Storage TRS20N65D-S1F is a Schottky diode array featuring one pair of common cathode configurations. This component offers a 650V DC reverse voltage capability and a 10A (DC) average rectified current per diode. The forward voltage drop is specified at a maximum of 1.7V at 10A. Reverse leakage current is rated at 90 µA at 650V. Operating at a maximum junction temperature of 175°C, this diode array utilizes through-hole mounting with a TO-247-3 package. Its fast recovery characteristics contribute to efficient power management in applications such as power supplies, inverters, and motor control systems. The device is supplied in tube packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
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