TRS16N65D,S1F
DIODE ARR SCHOTT 650V 8A TO247Manufacturer: Toshiba Semiconductor and Storage
Categories: Diode Arrays
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Toshiba Semiconductor and Storage TRS16N65D-S1F is a Schottky diode array featuring a common cathode configuration. This component offers a 650V reverse voltage capability and an 8A average rectified current per diode, suitable for demanding power applications. With a maximum forward voltage of 1.7V at 8A, it exhibits efficient forward conduction. The device operates at high junction temperatures, with a maximum of 175°C. Packaged in a TO-247-3 through-hole format, this diode array is designed for robust thermal performance. It is commonly utilized in power supplies, motor control, and renewable energy systems where high voltage and current handling are critical.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 8A (DC) |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
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