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TRS12N65D,S1F

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TRS12N65D,S1F

DIODE ARR SCHOTT 650V 6A TO247

Manufacturer: Toshiba Semiconductor and Storage

Categories: Diode Arrays

Quality Control: Learn More

Toshiba Semiconductor and Storage TRS12N65D-S1F is a Schottky diode array featuring a common cathode configuration. This component offers a 650V reverse voltage with a maximum forward voltage of 1.7V at 6A. The device boasts a continuous average rectified current of 6A per diode and a reverse leakage of 90 µA at 650V. Designed for through-hole mounting in a TO-247-3 package, it operates at junction temperatures up to 175°C (Max). The fast recovery speed, less than 500ns for currents greater than 200mA, makes it suitable for applications in power supply units, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologySchottky
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)6A (DC)
Supplier Device PackageTO-247
Operating Temperature - Junction175°C (Max)
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 6 A
Current - Reverse Leakage @ Vr90 µA @ 650 V

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