HN2S03T(TE85L)
DIODE ARR SCHOTT 20V 50MA TESQManufacturer: Toshiba Semiconductor and Storage
Categories: Diode Arrays
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Toshiba Semiconductor and Storage HN2S03T-TE85L- is a diode array featuring two independent Schottky diodes. Each diode offers a maximum reverse voltage (Vr) of 20V and an average rectified current (Io) of 50mA. The low forward voltage drop is specified at 550mV at 50mA, with a reverse leakage current of 500nA at 20V.
This component is housed in a 4-SMD, Flat Leads package (TESQ) suitable for surface mounting. Operating at junction temperatures up to 125°C (Max), the HN2S03T-TE85L- is delivered on a Tape & Reel (TR) for efficient manufacturing processes. Its small-signal speed capability is suitable for applications requiring rectification and switching up to 200mA. This diode array finds application in various electronic systems including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 50mA |
| Supplier Device Package | TESQ |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 50 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 20 V |
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