HN2S03FE(TE85L,F)
DIODE ARRAY SCHOTT 20V 50MA ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Diode Arrays
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Toshiba Semiconductor and Storage HN2S03FE-TE85L-F- is a three-independent diode array featuring Schottky barrier technology. Each diode offers a maximum reverse voltage (Vr) of 20V and a forward voltage (Vf) of 550mV at 50mA. The average rectified current (Io) per diode is rated at 50mA, with a low reverse leakage current of 500nA at 20V. This component is housed in an ES6 package, compatible with SOT-563 and SOT-666 footprints, and supplied on tape and reel. Its small signal speed is suitable for applications requiring up to 200mA. This diode array is commonly utilized in consumer electronics and industrial control systems. The maximum junction operating temperature is 125°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Diode Configuration | 3 Independent |
| Current - Average Rectified (Io) (per Diode) | 50mA |
| Supplier Device Package | ES6 |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 50 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 20 V |
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