1SS383(TE85L,F)
DIODE ARR SCHOTT 40V 100MA USQManufacturer: Toshiba Semiconductor and Storage
Categories: Diode Arrays
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Toshiba Semiconductor and Storage's 1SS383-TE85L-F- is a two-independent Schottky diode array designed for compact surface-mount applications. This component offers a maximum reverse voltage (Vr) of 40V and a per-diode average rectified current (Io) of 100mA. It exhibits a low forward voltage (Vf) of 600mV at the rated 100mA, with a minimal reverse leakage current of 5µA at 40V. The diode array is housed in an SC-82 package, also known as USQ, and is supplied on tape and reel. Its Schottky technology ensures fast switching speeds, suitable for signal processing and rectification in consumer electronics and telecommunications equipment. The maximum operating junction temperature is 125°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 100mA |
| Supplier Device Package | USQ |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 100 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 40 V |
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