1SS360(T5L,F,T)
DIODE ARRAY GP 80V 100MA SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Diode Arrays
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Toshiba Semiconductor and Storage 1SS360-T5L-F-T- is a dual diode array featuring a common anode configuration. This small signal diode array is rated for a maximum reverse voltage of 80 V and a forward current of 100 mA per diode. It exhibits a typical forward voltage of 1.2 V at 100 mA and a low reverse leakage current of 500 nA at 80 V. The device boasts a fast reverse recovery time of 4 ns, making it suitable for high-speed switching applications. Packaged in an SC-75 (SOT-416) surface-mount format, this component is supplied on tape and reel. The 1SS360-T5L-F-T- finds application in various electronic systems, including telecommunications and consumer electronics where signal processing and switching are critical. Its operating junction temperature can reach up to 125°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 100mA |
| Supplier Device Package | SSM |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V |
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