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TPCP8901(TE85L,F,M

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TPCP8901(TE85L,F,M

TRANS NPN/PNP 50V 1A PS8

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Toshiba Semiconductor and Storage TPCP8901-TE85L-F-M is a bipolar transistor array featuring one NPN and one PNP transistor. This component offers a 50V collector-emitter breakdown voltage. The NPN transistor supports a 1A collector current (Ic) with a Vce(sat) of 170mV at 6mA/300mA and a minimum DC current gain (hFE) of 400 at 100mA/2V. The PNP transistor is rated for 800mA collector current with a Vce(sat) of 200mV at 10mA/300mA and a minimum hFE of 200 at 100mA/2V. Maximum power dissipation is 1.48W. The device exhibits a low collector cutoff current (ICBO) of 100nA. Operating temperature range is up to 150°C (TJ). Packaged in an 8-SMD, Flat Leads (PS-8) configuration, this component is supplied on a Tape & Reel (TR). It finds application in industrial and consumer electronics requiring compact switching and amplification solutions.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max1.48W
Current - Collector (Ic) (Max)1A, 800mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 100mA, 2V / 200 @ 100mA, 2V
Frequency - Transition-
Supplier Device PackagePS-8

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