TPCP8701(TE85L,F,M
TRANS 2NPN 80V 3A PS8Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage TPCP8701-TE85L-F-M is a dual NPN bipolar junction transistor (BJT) array housed in an 8-SMD, Flat Leads (PS-8) package. This device features a collector-emitter breakdown voltage (Vce) of 80V and can handle a continuous collector current (Ic) of up to 3A. It offers a minimum DC current gain (hFE) of 400 at 300mA and 2V. The saturation voltage (Vce Sat) is a maximum of 140mV at 20mA base current and 1A collector current. With a maximum power dissipation of 1.77W and an operating junction temperature of 150°C, this transistor array is suitable for applications in automotive and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 1.77W |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 140mV @ 20mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 300mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | PS-8 |
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