HN4C06J-BL(TE85L,F
TRANS 2 NPN 120V 100MA SC74AManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Toshiba Semiconductor and Storage HN4C06J-BL-TE85L-F is a bipolar transistor array featuring two NPN transistors in a common emitter configuration. This device offers a collector-emitter breakdown voltage of 120V and a maximum collector current of 100mA. With a transition frequency of 100MHz and a maximum power dissipation of 300mW, it is suitable for applications requiring moderate switching speeds and current handling. The minimum DC current gain (hFE) is specified as 200 at 2mA collector current and 6V Vce. Saturation voltage (Vce(sat)) is a maximum of 300mV at 1mA base current and 10mA collector current. The component utilizes a surface mount SC-74A (SOT-753) package and is supplied on a tape and reel. This transistor array finds use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) Common Emitter |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SMV |
Request a Quote
Clients Also Buy
HN3A51F(TE85L,F)
TRANS 2PNP 120V 0.1A SM6
HN1A01FU-Y,LF
TRANS 2PNP 50V 0.15A US6
HN4B04J(TE85L,F)
TRANS NPN/PNP 30V 0.5A SMV
