HN4B102J(TE85L,F)
PB-F POWER TRANSISTOR SMV MOQ=30Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 30V 1.8A, 2A 750mW Surface Mount SMV
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 750mW |
| Current - Collector (Ic) (Max) | 1.8A, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 200mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | SMV |
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