HN4B04J(TE85L,F)
TRANS NPN/PNP 30V 0.5A SMVManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage HN4B04J-TE85L-F- is a bipolar transistor array featuring one NPN and one PNP transistor. This device offers a collector-emitter breakdown voltage of 30V and a maximum collector current of 500mA. With a transition frequency of 200MHz and a power dissipation of 300mW, it is suitable for applications requiring compact high-frequency switching. The SC-74A, SOT-753 package in tape and reel facilitates automated assembly. Key parameters include a minimum DC current gain (hFE) of 70 at 100mA and 1V, and a Vce saturation of 250mV at 10mA, 100mA. This transistor array finds use in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SMV |
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