HN3C51F-GR(TE85L,F
TRANS 2NPN 120V 0.1A SM6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage HN3C51F-GR-TE85L-F is a dual NPN bipolar transistor array. This surface mount component, housed in an SM6 package (SC-74, SOT-457), offers a collector-emitter breakdown voltage of 120V and a maximum collector current of 100mA. It features a transition frequency of 100MHz and a maximum power dissipation of 300mW. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA, 6V, with a Vce saturation of 300mV at 1mA, 10mA. Collector cutoff current (ICBO) is a maximum of 100nA. This component operates at temperatures up to 150°C (TJ) and is supplied in Tape & Reel packaging. It is commonly utilized in industrial and consumer electronics applications requiring compact, high-performance switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SM6 |
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