HN3C51F-BL(TE85L,F
TRANS 2NPN 120V 0.1A SM6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage HN3C51F-BL-TE85L-F is a bipolar transistor array featuring two NPN transistors. This device offers a collector-emitter breakdown voltage of 120V and a maximum collector current of 100mA. The transition frequency is specified at 100MHz, with a minimum DC current gain (hFE) of 350 at 2mA and 6V. The maximum power dissipation is 300mW. Packaged in an SM6 (SC-74, SOT-457) surface mount configuration, this component is supplied on tape and reel. It is designed for applications requiring compact dual NPN transistor functionality in areas such as consumer electronics and industrial control. The collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 350 @ 2mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SM6 |
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