HN3A51F(TE85L,F)
TRANS 2PNP 120V 0.1A SM6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage HN3A51F-TE85L-F- is a bipolar junction transistor (BJT) array featuring two PNP transistors. This surface mount component, housed in an SM6 package (SC-74, SOT-457), offers a collector-emitter breakdown voltage of 120V and a maximum collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA and 6V, with a transition frequency of 100MHz. Its maximum power dissipation is 300mW, and it operates at temperatures up to 150°C. Applications include industrial automation and consumer electronics. The component is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SM6 |
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