HN2C01FU-Y(TE85L,F
TRANS 2NPN 50V 0.15A US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage HN2C01FU-Y-TE85L-F is a dual NPN bipolar junction transistor array designed for surface mounting. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. Featuring a minimum DC current gain (hFE) of 120 at 2mA and 6V, it exhibits a transition frequency of 80MHz. The device has a maximum power dissipation of 200mW and a Vce saturation voltage of 250mV at 10mA base current and 100mA collector current. The package type is 6-TSSOP, SC-88, SOT-363, supplied in tape and reel. Applications include general-purpose switching and amplification in consumer electronics, industrial control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 125°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | US6 |
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