HN2C01FEYTE85LF
TRANS 2NPN 50V 0.15A ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage HN2C01FEYTE85LF is a dual NPN bipolar junction transistor array designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. The DC current gain (hFE) is a minimum of 120 at 2mA collector current and 6V collector-emitter voltage. With a transition frequency of 60MHz and a power dissipation of 100mW, it is suitable for general-purpose amplification and switching in consumer electronics and industrial automation. The device operates at junction temperatures up to 150°C and is supplied in an ES6 package, commonly found in SOT-563 or SOT-666 configurations, on a tape and reel. The collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | ES6 |
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