HN1C01FYTE85LF
TRANS 2NPN 50V 0.15A SM6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays
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Toshiba Semiconductor and Storage HN1C01FYTE85LF is a bipolar transistor array featuring two NPN transistors in a surface mount SM6 package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. With a transition frequency of 80MHz and a minimum DC current gain (hFE) of 120 at 2mA/6V, it is suitable for applications requiring moderate switching speeds and amplification. The maximum power dissipation is 300mW, and the device operates within a temperature range of -55°C to 125°C. Typical applications include general-purpose amplification and switching circuits in consumer electronics and industrial control systems. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 125°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SM6 |
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