RN49A1FE(TE85L,F)
PNP + NPN BRT Q1BSR=2.2KOHM Q1BEManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN49A1FE-TE85L-F- is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual transistor configuration offers integrated base resistors for simplified circuit design, with values of 2.2 kOhms and 22 kOhms for the NPN and 47 kOhms for the PNP. Rated for a maximum collector-emitter voltage of 50V and collector current of 100mA, it provides a maximum power dissipation of 100mW. Transition frequencies are specified at 200MHz for the NPN and 250MHz for the PNP. The device is supplied in an ES6 package, suitable for surface mount applications, and is provided on tape and reel. This component is commonly utilized in industrial automation, consumer electronics, and communication systems requiring simplified transistor biasing.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz, 250MHz |
| Resistor - Base (R1) | 2.2kOhms, 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | ES6 |
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