RN49A1(TE85L,F)
PNP + NPN BRT Q1BSR=2.2KOHM Q1BEManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage's RN49A1-TE85L-F- is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual transistor configuration offers integrated base resistors, specifically 2.2kO and 22kO for the NPN, and 47kO for the PNP. It is designed for surface mount applications in a compact US6 package. With a collector-emitter breakdown voltage of 50V, it handles a maximum collector current of 100mA and dissipates up to 200mW. The device boasts transition frequencies of 200MHz for the NPN and 250MHz for the PNP, with a minimum DC current gain of 80. The Vce saturation voltage is 300mV at 250µA base and 5mA collector current. This component finds utility in various industrial and consumer electronics applications requiring compact, pre-biased transistor solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz, 250MHz |
| Resistor - Base (R1) | 2.2kOhms, 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
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