RN49A1(T5L,F,T)
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN49A1-T5L-F-T- is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single US6 package. This dual transistor configuration offers a collector current of up to 100mA with a collector-emitter breakdown voltage of 50V. The device boasts a transition frequency of 200MHz and a maximum power dissipation of 200mW. Internal base resistors are specified at 2.2kOhms (R1) and 47kOhms (R2). The RN49A1-T5L-F-T- is designed for surface mount applications and is supplied on tape and reel. This component is utilized in various industrial and consumer electronics applications requiring simplified signal conditioning and digital logic interfacing.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
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