RN4989FE,LF(CT
NPN + PNP BRT Q1BSR47KOHM Q1BER2Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 250MHz, 200MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | ES6 |
Request a Quote
Clients Also Buy
RN1510(TE85L,F)
TRANS 2NPN PREBIAS 0.3W SMV
RN1970FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6
RN4908,LF(CT
PNP + NPN BRT Q1BSR10KOHM Q1BER4
