RN4983,LF(CT
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN4983-LF-CT is a pre-biased bipolar transistor featuring one NPN and one PNP transistor in a dual configuration. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The RN4983-LF-CT provides a minimum DC current gain (hFE) of 70 at 10mA and 5V. Transition frequencies are rated at 250MHz for the NPN and 200MHz for the PNP. Each transistor includes integrated base resistors of 22kOhms. The saturation voltage (Vce) is a maximum of 300mV at 250µA base current and 5mA collector current. The component is supplied in a 6-TSSOP, SC-88, SOT-363 (US6) package, suitable for surface mounting and available on tape and reel. This component is utilized in applications such as industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 250MHz, 200MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | US6 |
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