RN4910(T5L,F,T)
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN4910-T5L-F-T- is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual transistor configuration offers integrated base resistors for simplified circuit design. Key specifications include a collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 200MHz. The part dissipates a maximum power of 200mW and has a typical Vce(sat) of 300mV at 250µA input bias and 5mA collector current. The DC current gain (hFE) is a minimum of 120 at 1mA collector current and 5V collector-emitter voltage. The RN4910-T5L-F-T- is supplied in a 6-TSSOP, SC-88, SOT-363 (US6) package, utilizing tape and reel packaging. This component finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | US6 |
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