RN4909(T5L,F,T)
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Toshiba Semiconductor and Storage RN4909-T5L-F-T- is a pre-biased bipolar transistor featuring a dual NPN and PNP configuration. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 200MHz, it is suitable for applications requiring moderate switching speeds. The integrated base resistors for both the NPN (47kOhms) and PNP (22kOhms) elements simplify circuit design. This device delivers 200mW of maximum power dissipation and is supplied in a compact US6 package, commonly found in the 6-TSSOP, SC-88, or SOT-363 footprint. It is ideal for use in consumer electronics, industrial automation, and communication systems where simplified biasing and space-saving solutions are critical. The device exhibits a saturation voltage of 300mV at 250µA base current and 5mA collector current, with a minimal collector cutoff current of 100nA. The DC current gain (hFE) is a minimum of 70 at 10mA collector current and 5V Vce. This component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | US6 |
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