RN4909,LF(CT
PNP + NPN BRT Q1BSR22KOHM Q1BER4Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN4909-LF-CT is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual configuration is housed in a 6-TSSOP, SC-88, SOT-363 (US6) surface mount package and supplied on tape and reel. Each transistor offers a collector current of 100mA and a collector-emitter breakdown voltage of 50V. The device exhibits a transition frequency of 200MHz for the NPN and 250MHz for the PNP. Internal base resistors include 47kOhms for the NPN (R1) and 22kOhms for the PNP (R2). The power dissipation is rated at 200mW. This component is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 200MHz, 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN1510(TE85L,F)
TRANS 2NPN PREBIAS 0.3W SMV
RN1907,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
RN2702TE85LF
TRANS 2PNP PREBIAS 0.2W USV
