RN4908(T5L,F,T)
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN4908-T5L-F-T- is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual-transistor configuration offers integrated base resistors (22 kOhms for NPN, 47 kOhms for PNP) simplifying circuit design for bias current generation. It supports a collector current of up to 100mA with a Vce saturation of 300mV at 5mA collector current. The device boasts a transition frequency of 200MHz, making it suitable for high-speed switching applications. With a maximum power dissipation of 200mW and a collector-emitter breakdown voltage of 50V, it finds utility in consumer electronics, industrial control systems, and communications infrastructure. The RN4908-T5L-F-T- is supplied in a compact US6 (6-TSSOP, SC-88, SOT-363) package on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN2708JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
RN1910FE,LF(CT
TRANS 2NPN PREBIAS 0.1W ES6
RN4986,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
