RN4907,LF
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN4907-LF is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual transistor configuration is housed in a compact US6 package, suitable for surface mount applications. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device boasts a transition frequency of 200MHz and a maximum power dissipation of 200mW. Integrated base resistors of 10kO (R1) and 47kO (R2) are included for simplified circuit design. Key parameters include a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a collector cutoff current of 500nA. Saturation voltage (Vce) is a maximum of 300mV at 250µA and 5mA. This component is commonly utilized in industrial automation, consumer electronics, and communication systems. The RN4907-LF is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN1510(TE85L,F)
TRANS 2NPN PREBIAS 0.3W SMV
RN1907,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
RN2702TE85LF
TRANS 2PNP PREBIAS 0.2W USV
