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Bipolar Transistor Arrays, Pre-Biased

RN4905T5LFT

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RN4905T5LFT

TRANS NPN/PNP PREBIAS 0.2W US6

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Toshiba Semiconductor and Storage RN4905T5LFT is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device is supplied in a compact US6 surface mount package, specifically a 6-TSSOP, SC-88, or SOT-363 configuration, delivered on tape and reel. Each transistor offers a collector-emitter breakdown voltage of 50V. The NPN transistor exhibits a maximum collector current of 100mA and a transition frequency of 200MHz, with a minimum DC current gain of 80 at 10mA and 5V. The internal base resistors are specified as 2.2kOhms (R1) and 47kOhms (R2). This component is suitable for applications in industrial automation, consumer electronics, and telecommunications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageUS6

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