RN4903(T5L,F,T)
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN4903-T5L-F-T- is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual-transistor device is housed in a compact US6 package, suitable for space-constrained applications. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The RN4903-T5L-F-T- exhibits a transition frequency of 200MHz, making it appropriate for moderate-speed switching and amplification tasks. The internal base resistors are configured with 22kOhms for both the NPN and PNP elements, simplifying circuit design. With a maximum power dissipation of 200mW and a saturation voltage of 300mV at 5mA, this component is utilized across various industries, including consumer electronics and industrial automation where simplified driver circuits are required. The device is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | US6 |
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