RN4902FE(TE85L,F)
TRANS NPN/PNP PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN4902FE-TE85L-F- is a dual pre-biased bipolar transistor featuring one NPN and one PNP element. This surface mount device, housed in an ES6 package (SOT-563, SOT-666), offers 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 200MHz and a power dissipation of 100mW, it is suitable for applications requiring compact signal switching and amplification. The internal base resistors are specified as 10kOhms for both R1 and R2. The device exhibits a minimum DC current gain (hFE) of 50 at 10mA, 5V and a saturation voltage (Vce) of 300mV at 250µA, 5mA. This component is commonly utilized in industrial automation and consumer electronics for high-density circuit designs. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | ES6 |
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