RN4902,LF
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Toshiba Semiconductor and Storage RN4902-LF is a pre-biased bipolar transistor featuring a dual configuration with one NPN and one PNP transistor. This device, packaged in a 6-TSSOP (US6) for surface mounting, offers a collector current of up to 100mA and a collector-emitter breakdown voltage of 50V. With a transition frequency of 200MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring low-power switching and amplification. The integrated base resistors are specified at 10kOhms for both R1 and R2, facilitating simplified circuit design. Key parameters include a minimum DC current gain (hFE) of 50 at 10mA/5V and a Vce saturation of 300mV at 250µA/5mA. This component finds utility in portable electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | US6 |
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