RN4901(T5L,F,T)
TRANS NPN/PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN4901-T5L-F-T- is a pre-biased bipolar transistor featuring dual NPN and PNP configurations. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It boasts transition frequencies of 200MHz for the NPN and 250MHz for the PNP. Integrated base resistors of 4.7kOhms are present for both transistors. The device is supplied in a compact US6 package, suitable for surface mount applications. Typical applications include digital logic interfaces and signal switching circuits in consumer electronics and industrial automation. Power dissipation is rated at 200mW, with a saturation voltage of 300mV at specified bias conditions. The DC current gain (hFE) is a minimum of 30 at 10mA collector current and 5V collector-emitter voltage.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Frequency - Transition | 200MHz, 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN2708JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
RN4986,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
RN4607(TE85L,F)
TRANS NPN/PNP PREBIAS 0.3W SM6
