RN46A1(TE85L,F)
PNP + NPN BRT Q1BSR=22KOHM Q1BERManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN46A1-TE85L-F- is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This surface mount component, packaged in an SM6 (SC-74, SOT-457) tape and reel configuration, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device includes integrated base resistors of 22kOhms and 10kOhms for both transistors, facilitating simplified circuit design. Transition frequencies are specified at 200MHz for the NPN and 250MHz for the PNP. Minimum DC current gain (hFE) is 70 @ 10mA, 5V for the NPN and 50 @ 10mA, 5V for the PNP. Maximum power dissipation is 300mW. This component is suitable for applications in consumer electronics, industrial control, and communication systems where discrete transistor functionality with reduced component count is desired.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V / 50 @ 10mA, 5V |
| Frequency - Transition | 200MHz, 250MHz |
| Resistor - Base (R1) | 22kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 22kOhms, 10kOhms |
| Supplier Device Package | SM6 |
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