RN4602TE85LF
TRANS NPN/PNP PREBIAS 0.3W SM6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN4602TE85LF is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SM6 package. This dual transistor configuration offers a collector current capability of up to 100mA with a collector-emitter breakdown voltage of 50V. It boasts a transition frequency of 200MHz and a maximum power dissipation of 300mW. The integrated base resistors are 10kOhms for both R1 and R2, simplifying external circuitry. Applications for this component include consumer electronics and industrial control systems. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SM6 |
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