RN2971FE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN2971FE-TE85L-F- is a pre-biased bipolar transistor featuring two PNP elements in a single ES6 package. This device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 200MHz and a power dissipation of 100mW, it is suitable for applications requiring compact signal amplification. The integrated base resistors, with a typical value of 10kOhms, simplify circuit design by eliminating the need for external biasing components. The minimum DC current gain (hFE) is 120 at 1mA and 5V. Vce saturation is specified at 300mV maximum for an input of 250µA and 5mA collector current. This component is commonly utilized in consumer electronics, industrial control, and communication systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | ES6 |
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