RN2969FE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN2969FE-TE85L-F- is a dual, pre-biased PNP bipolar junction transistor (BJT) designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is specified at 200MHz, with a maximum power dissipation of 100mW. The integrated bias resistors are R1 at 47kOhms and R2 at 22kOhms, providing a minimum DC current gain (hFE) of 70 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce (sat)) is a maximum of 300mV at 250µA base current and 5mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. The RN2969FE-TE85L-F- is supplied in an ES6 package, commonly found in SOT-563 or SOT-666 footprints, and is available on tape and reel. This component is utilized in various industrial and consumer electronics applications requiring signal amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | ES6 |
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