RN2911(T5L,F,T)
TRANS 2PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage presents the RN2911-T5L-F-T-, a dual PNP pre-biased bipolar junction transistor (BJT). This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 200MHz. The integrated base resistor (R1) is 10kOhms. Designed for surface mount applications, it is housed in a compact US6 package (6-TSSOP, SC-88, SOT-363). With a maximum power dissipation of 200mW and a minimum DC current gain (hFE) of 120 at 1mA and 5V, this transistor is suitable for applications in consumer electronics and industrial control systems. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | US6 |
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