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Bipolar Transistor Arrays, Pre-Biased

RN2910(T5L,F,T)

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RN2910(T5L,F,T)

TRANS 2PNP PREBIAS 0.2W US6

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
Supplier Device PackageUS6

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