RN2906(T5L,F,T)
TRANS 2PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN2906-T5L-F-T- is a pre-biased bipolar transistor array featuring two PNP transistors in a single US6 package. This dual-transistor configuration offers a collector current of up to 100mA and a collector-emitter breakdown voltage of 50V. With a transition frequency of 200MHz, it provides efficient switching characteristics. The integrated base resistors, R1 and R2, are specified at 4.7kOhms and 47kOhms respectively, simplifying circuit design and reducing component count. The device exhibits a maximum Vce saturation of 300mV at 250µA base and 5mA collector current, with a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V Vce. This component is suitable for applications in consumer electronics and industrial control systems requiring compact, pre-biased transistor solutions. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN1510(TE85L,F)
TRANS 2NPN PREBIAS 0.3W SMV
RN1970FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6
RN4908,LF(CT
PNP + NPN BRT Q1BSR10KOHM Q1BER4
