RN2905,LF(CT
TRANS 2PNP PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the RN2905-LF-CT, a pre-biased bipolar transistor array featuring two PNP elements. This device is designed for surface mount applications within a 6-TSSOP, SC-88, or SOT-363 package, supplied on tape and reel. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The RN2905-LF-CT boasts a transition frequency of 200MHz and a low collector cutoff current of 100nA (ICBO). Each PNP element includes integrated base resistors (R1 = 2.2kOhms) and emitter base resistors (R2 = 47kOhms), simplifying circuit design. With a maximum power dissipation of 200mW and a Vce saturation of 300mV at 250µA/5mA, this component is suitable for applications in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN2709JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
RN2906(T5L,F,T)
TRANS 2PNP PREBIAS 0.2W US6
RN2714,LF
PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
