RN2902FE(T5L,F,T)
TRANS 2PNP PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage presents the RN2902FE-T5L-F-T-, a pre-biased bipolar transistor. This component features two PNP transistors in a dual configuration, offering a collector current capability of up to 100mA and a collector-emitter breakdown voltage of 50V. With a transition frequency of 200MHz and a maximum power dissipation of 100mW, it is suitable for applications requiring moderate switching speeds and low power consumption. The integrated base resistors, both R1 and R2, are specified at 10kOhms, simplifying external biasing circuitry. The device exhibits a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 300mV at 250µA base current and 5mA collector current, with a cutoff current (ICBO) of 100nA. The RN2902FE-T5L-F-T- is supplied in the ES6 package, suitable for surface mount applications, and is available on tape and reel. This transistor array finds use in various electronic circuits, including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | ES6 |
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