RN2902,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) PNManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN2902-LXHF-CT is a dual PNP pre-biased bipolar junction transistor (BJT) designed for automotive applications. This AEC-Q101 qualified component features a 50V collector-emitter breakdown voltage and a continuous collector current capability of 100mA. The integrated base resistors, R1 and R2, are both 10kOhms, simplifying circuit design. With a transition frequency of 200MHz and a maximum power dissipation of 200mW, the RN2902-LXHF-CT is suitable for signal switching and amplification in automotive infotainment, powertrain control, and body electronics systems. It is supplied in a 6-TSSOP, SC-88, SOT-363 (US6) package on tape and reel. The device exhibits a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V Vce, with a saturation voltage of 300mV at 250µA base current and 5mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | US6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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